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II-VI also announced a large-scale investment in SiC. On the 10th, II-VI announced its investment of $1 billion (about KRW 1.16 trillion) in SiC over the next 10 years. The company plans to increase its SiC wafer …
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II-VI says that Tianyu (one of China's largest SiC epiwafer manufacturers) has recognized it as a long-established global supplier of 150mm SiC with the ability to …
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PITTSBURGH and SANTA CLARA, CALIF., July 1, 2022 (GLOBE NEWSWIRE) – II‐VI Incorporated (Nasdaq: IIVI) today successfully completed the acquisition of Coherent, Inc. (Nasdaq: COHR), forming a global leader in materials, networking, and lasers. Under the terms of the merger agreement, each share of …
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As the semiconductor shortage comes to an end, II-VI is strategically positioning itself as a Silicon Carbide (SiC) wafers and automotive chips leader. SiC inverter market for EVs for 2021 and ...
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Features. Highly reliable GE SiC MOSFET devices. Low R DS (on) (3.1 mΩ) (device only) Low stray inductance (1 nH) SiC die qualified to +200 °C. Ultra-low switching losses over entire operating range. Body diode with minimal reverse recovery. Integrated temperature sensing. Dedicated DESAT Pin and Source- Kelvin Pin.
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II-VI Incorporated (Nasdaq: IIVI), a leader in engineered materials and optoelectronic components, today announced a corporate name change to Coherent Corp. (Nasdaq: COHR) and a new brand identity, following the successful completion of II-VI's acquisition of Coherent, Inc., on July 1, 2022. "We chose the name Coherent because it …
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News: Microelectronics 7 July 2020. II-VI relying on GE's IP to conquer power SiC markets. As announced at the end of June, engineered materials and optoelectronic component maker II-VI Inc of Saxonburg, PA, USA – which manufactures silicon carbide (SiC) substrates – has licensed SiC technology from General Electric with a view to …
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February 8, 2023. Coherent Corp. Reports Fiscal 2023 First Quarter Results. November 9, 2022 View Fiscal 2023 Q1 Results. II-VI Changes Name to Coherent and Launches New Brand Identity. September 8, 2022. II-VI Incorporated Reports Q4 and Full-Year Fiscal 2022 Results. August 24, 2022 View Fiscal 2022 Full Year Results.
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Additional Key Properties of II-VI Advanced Materials SiC Substrates (typical values*) Parameter Polytype Dopant Resistivity Orientation FWHM Roughness, Ra** Dislocation density Micropipe density N-type 4H Nitrogen ~0.02 Ohm-cm 4° off-axis < 20 arc-sec <5Å ~ 3·103 cm-2 < 0.1 cm -2 Semi-insulating 4H, 6H Vanadium > 10 11 Ohm-cm On-axis < 25 ...
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Aug 17, 2022 II‐VI Incorporated (Nasdaq: IIVI), a leader in wide-bandgap compound semiconductors, today announced that it closed an over $100 million contract to supply …
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To meet the market demand in Asia, II-VI established in 2021 a backend processing line for SiC substrates, in over 50,000 sq. ft. of new cleanroom space, at II-VI's Asia Regional Headquarters in Fuzhou, China. Tianyu will benefit from II-VI's 150 mm SiC global production capacity in both the U.S. and in China.
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March 07, 2022 08:30 ET | Source: II-VI Incorporated. Follow. Details the previously announced $1 billion investment in silicon carbide (SiC) over the next 10 years. Pennsylvania site's annual ...
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About Us. Coherent empowers market innovators to define the future through breakthrough technologies, from materials to systems. We deliver innovations that resonate with our customers in diversified applications …
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News: Suppliers 6 October 2020. II-VI completes Ascatron and INNOViON acquisitions, and joins SIA. Engineered materials and optoelectronic component maker II-VI Inc of Saxonburg, PA, USA – which manufactures silicon carbide (SiC) substrates – says that Sohail Khan has joined it as executive VP of New Ventures & Wide-Bandgap Electronics Technologies.
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II‐VI Incorporated (Nasdaq: IIVI), a leader in wide-bandgap semiconductors, today announced that it is accelerating its investment in 150 mm and 200 mm silicon …
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United States 375 SAXONBURG BLVD SAXONBURG, PA 16056 UNITED STATES T. +1 888-558-1504 [email protected]
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PITTSBURGH, April 15, 2021 (GLOBE NEWSWIRE) -- II‐VI Incorporated (Nasdaq: IIVI), a leader in wide-bandgap compound semiconductors, today announced …
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SAXONBURG, Pa – II‐VI Incorporated (Nasdaq: IIVI), a leader in wide-bandgap compound semiconductors, today announced that it closed a multi-year …
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Coherent Silicon Carbide MOSFETs offer superior energy efficiency and performance over existing silicon technologies. Our devices offer 200 °C junction temperature capability along with industry leading avalanche ratings and superior specific on-resistance over full temperature range. These devices enable higher switching frequencies that ...
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The key advantages of SiC-based technology include reduced switching losses, higher power density, better heat dissipation, and increased bandwidth capability. ... October 10, 2019: II-VI Incorporated Unveils the World's First 200 mm Semi-Insulating SiC Substrates for RF Power Amplifiers in 5G Antennas. Product Details Datasheet and Documents
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To meet the market demand in Asia, II-VI established in 2021 a backend processing line for SiC substrates, in over 50,000 sq. ft. of new cleanroom space, at II-VI's Asia Regional Headquarters in ...
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As part of its previously announced $1bn investment in silicon carbide (SiC) over the next 10 years, engineered materials and optoelectronic component maker II-VI …
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II-VI Incorporated is now Coherent Corp. We chose the name Coherent because of its meaning: bringing things together. This new company name and identity represents our unity in action, clarity of purpose, and broader sense of engagement with our customers. Coherent empowers market innovators through our breakthrough products and …
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Wide-Bandgap Electronics. Coherent leverages its world-class 150 mm and 200 mm Silicon Carbide technology platforms for a new era in power electronics. Coherent provides power electronics solutions ranging from SiC substrates, to epitaxial wafers, devices, and modules. These state-of-the-art products enable power converters with unrivaled ...
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The agreement will enable II-VI, which plans to invest over $1 billion in SiC over the coming decade, to capitalize on lucrative new opportunities as it expands its wide bandgap footprint. GE will in turn …
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The deal gives II-VI access to the GE lab's SiC module technology and team of experts to accelerate customer design-in projects. A growing number of applications, such as in electric vehicles, renewable energy, datacenters, industrial motors, and power supplies, are driving the strong demand for SiC-based power electronics, due to their …
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SiC and GaN II-VI will be a key enabler of SiC and GaN compound semiconductor technology nodes Leading technology, vertical integration, scalable 150mm platform, supply chain security 5G wireless, green energy, EV/HEV Pine Brook, NJ, USA SiC Substrates (RF and Power) • R&D • Crystal growth • Slicing Champaign, IL, USA …
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インフィニオンはこれまで、SiCウエハーのWolfspeed（ウルフスピード）やCoherent（コヒレント、II-VI）、レゾナックなどとのをんできた。たに2とした …
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With the help of custom silicon-carbide wafers, these devices can be manufactured in various configurations. In addition to this, II-VI also produces Silicon Carbide by epitaxial deposition on 150 mm silicon carbide wafers. The company is capable of producing tens of thousands of wafers every week. It also maintains a large complement of high ...
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Leveraging its differentiated 150 mm SiC substrates, II-VI successfully completed the qualification of its 1200 V SiC MOSFET platform to the Automotive Electronics Council AEC-Q101 standard ...
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This is part of the company's previously announced USD 1 billion investment in SiC over the next 10 years. In April last year, the company expanded its SiC wafer finishing manufacturing footprint in China.. To meet the accelerating global demand for SiC power electronics, II-VI says it will significantly build out its nearly 300,000 square foot …
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