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The production ramp of the silicon carbide (SiC) MOSFET base technology has been safely completed, Infineon is now bringing the most comprehensive discrete SiC portfolio for industrial applications to the market. The 1200 V CoolSiC™ MOSFET devices are rated from 30 mΩ to 350 mΩ and implemented into TO247-3 and TO247-4 housings.
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Infineon and SCHWEIZER extend cooperation in chip embedding to develop more efficient silicon carbide automotive solutions . ... (SiC). Both partners are developing a solution to embed Infineon's 1200 V CoolSiC™ chips directly onto printed circuit boards (PCB). This will increase the range of electric vehicles and reduce the total system ...
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Joint press release of GT Advanced Technologies and Infineon Technologies AG. MUNICH, Germany and HUDSON, N.H., Nov. 09, 2020 (GLOBE NEWSWIRE) -- Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY ...
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Vitesco has signed a cooperation agreement with Infineon for the supply of silicon carbide power semiconductors – according to the company against the background of the strong growth in electromobility. In addition, Vitesco and Infineon plan to collaborate on development. The cooperation with Infineon opens up "the possibility of additional ...
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Infineon says CoolSiC power module reduces energy consumption of streetcars by 10% Infineon aims to ramp up in-house production in 2022 China accelerates development of SiC MOSFET for power ...
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Our innovative and revolutionary technology implements high-performance wide band gap semiconductor materials and includes Infineon's CoolSiC™. Moreover, our CoolGaN™ solutions in both …
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Figure 1: Planar DMOS SiC MOSFET (left), and vertical trench TMOS SiC MOSFET with the corresponding location of resistance-relevant contributions Infineon_feature.qxp_Layout 1 19/06/2020 08:17 Page 15
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Enter to win the new EVAL-1ED3142MU12F-SiC. Register now to win this entry-level evaluation kit designed to evaluate the functionality and capability of two 1200 V CoolSiC™ MOSFETs and Infineon's new 1ED3142 gate driver IC in a half-bridge configuration. Comes with the EVAL-PSIR2085 isolated power supply board to get you up and running quickly!
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Infineon holds #1 position in power semi market, based on strength in discretes and modules; power ICs provide growth potential 33.9 45.6 12.1% 12.9% 0% 10% 20% 30% 0 2015 2017 2019 Total market for power semiconductors Infineon market share Market CAGR (15-19): 7.7% Source: Based on or includes research from Omdia, …
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The PFC part in the DC EV charger can use Infineon products, such as 1200 V Si or SiC diodes for D1~D6, CoolMOS™ MOSFET and TRENCHSTOP™ IGBT5 for SW1~SW6. The LLC DC-DC primary side can use the CFD series CoolMOS MOSFET, and the secondary side can use 650 V Rapid Si diodes or 650 V Infineon CoolSiC diodes.
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Infineon annual report 2021.pdf provides a comprehensive overview of the company's performance, strategy, and outlook in the semiconductor industry. Learn how Infineon delivers innovative solutions for power, automotive, industrial, and consumer applications, and how it creates value for its stakeholders and society.
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The use of SiC based power semiconductor solutions has shown a huge increase over the last years. Driving forces behind this market development are the following trends: energy saving, size reduction, system …
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The potential degradation in bipolar SiC elements: Recombination induced increase of R DS(on) and V SD Bipolar degradation might affect all SiC MOSFET technologies Effect is defect-driven and related to defects of substrate material Statistical effect: devices without these defects will not have bipolar degradation effect
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Get the latest Infineon Technologies AG (IFX) real-time quote, historical performance, charts, and other financial information to help you make more informed trading and investment decisions.
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The head of Infineon's silicon-carbide business said some customers don't want to talk about silicon at all anymore.
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Infineon and Resonac announce the expansion of their cooperation and a new multi-year agreement for delivery of silicon carbide (SiC) materials Munich, …
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"Our aim is to continuously improve our SiC material and develop the next technology. We value Infineon as an excellent partner in this regard." The contract between Infineon and Showa Denko K.K. has …
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Get help from Infineon support engineers, and expert members to solve your design challenges anytime, from anywhere, in any topic, and in your preferred language. Robust intelligent power modules (IPM) from Infineon simplify motor drive system design. It involves products from surface mount CIPOS™ Tiny, Nano, Micro, and Mini to standard …
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このしいのは、SiCにするなパートナーシップをめるものです。このでは、レゾナックはインフィニオンにSiCのになSiCをし、10ののうちのシェアをカバーすることになります。
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Infineon CoolSiC™ Goes Broad in Industrial Power Electronics Dr. Peter Friedrichs, Infineon Technologies AG Senior Director SiC. Infineon's SiC design funnel for industrial applications amounts to more than €1.4bn stable growth situation 0 50 100
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15.11.2022 - 14:26. Infineon Technologies and Stellantis have signed a non-binding memorandum of understanding as the first step towards a possible multi-year supply cooperation for silicon carbide (SiC) semiconductors. Under the agreement, Infineon would reserve manufacturing capacity and supply corresponding chips to Stellantis' direct Tier ...
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Additionally, for all variants a low on-resistance, stable and reproducible even in mass production, is achieved. Guaranteed at driving voltage levels of only V. CoolSiC™ is synonymous with pioneering in trench SiC MOSFET technology. Infineon once again demonstrates that we continue to strive for innovation and technology leadership – also ...
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II-VI made the first 200mm SiC back in 2015. So if you go by SiC real estate and area = pi x radius squared, you get about 1.75 more ICs per wafer by going to 200mm. II-Vi and WOLF are going full ...
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Infineon's SiC manufacturing capacity is about to increase tenfold by 2027. A new plant in Kulim is scheduled to start production in 2024. Today, Infineon already provides SiC semiconductors to more than 3,600 customers worldwide. About Infineon Further information is available at
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Infineon developed two stress tests to evaluate the impact of extrinsic defects on gate-oxide reliability, both to place devices under stresses they might be …
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Infineon is the world's first SiC discrete power supplier. It was the global pioneer in SiC technology and commercialization. In this training we will present one of the most successful solutions that Infineon's developed …
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Electronics Media - May 3, 2023 Angelique van der Burg, Chief Procurement Officer at Infineon Infineon Technologies AG has signed an agreement with Chinese …
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May 6, 2021| Business & Financial Press. Munich, Germany – 6 May 2021 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has concluded a supply contract with the Japanese wafer manufacturer Showa Denko …
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With the introduction of gallium nitride, Infineon is currently the only company in the market offering a full-spectrum portfolio of all power technologies – silicon (Si), silicon carbide (SiC) and GaN.We deliver solutions from microamps to megawatts with superior energy efficiency, offering highly reliable IGBTs, power MOSFETs, GaN e-mode HEMTs, power discretes, …
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Infineon owns the complete supply chain and offers unbiased design-in support for Si, GaN and SiC. Turn to Infineon, the trusted SiC-supplier, and become part of a revolution to rely on - …
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Infineon's SiC manufacturing capacity will increase tenfold by 2027. A new plant in Kulim, Malaysia is scheduled to start production in 2024, adding to Infineon's manufacturing capacities in Villach, Austria. Today, Infineon already provides SiC semiconductors to more than 3,600 automotive and industrial customers worldwide.
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Munich, Germany – 3 May, 2023 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has signed an agreement with Chinese silicon carbide (SiC) supplier SICC to diversify Infineon's SiC material …
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Infineon and Resonac announce the expansion of their cooperation and a new multi-year agreement for delivery of silicon carbide (SiC) materials. Munich, …
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