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However, hot-carrier degradation in a SiC MOSFET is difficult to detect because the as fabricated devices contain high level of defects. We report, for the first time, evidence of hot-carrier effect in 4H-SiC MOSFET. The result suggests that hot hole from impact ionization trapped in the oxide is the cause of the channel hot-carrier effect.
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PRESiCETM 11-mask fabrication process for SiC power MOSFETs [12]. A Si-face (0001) 4H-SiC 6-inch wafer with a10µm thick and 8×1015 cm−3 doped n-type epitaxial layer grown on an N+ substrate was used as a starting material. The split gate structure was created in the poly-Si gate patterning mask [11]. Fig. 3 shows typical measured output ...
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At present, the high-temperature applications of 4H-SiC MOSFETs develop towards 300 C.[11,12] However, the off-state negative V gs dependence of th,sub in 4H-SiC MOSFET at 300 C has not been studied.[5,13–16] On the other hand, the DV th,sub of 4H-SiC MOSFET could be caused by the interface traps or oxide traps in channel region.[6,17] As we ...
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4H-SiCOI preparation. A 100 mm wafer of on-axis, research-grade, high-purity semi-insulation (HPSI) 4H-SiC from Cree was diced into 10 mm × 10 mm dies. The dies were thoroughly cleaned and ~20 nm ...
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Dod-cell and Oct-cell MOSFETs in this work are shown in Figure1c. All MOSFETs have the same edge termination design and die size. The die size is 1.15 1.15 mm2, including the termination. The MOSFETs are fabricated on a 6-inch SiC wafer by X-Fab using the same SiC power MOSFET process. Figure1d shows the cross-sectional …
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1. Introduction. Silicon devices can only operate at maximum temperature 125–175 °C. Currently, SOI CMOS is most commonly used for high temperature integrated circuits allowing operating temperatures up to 250 °C, due to the efficient reduction of leakage currents [1], [2].However, for high temperature applications, high bandgap …
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In this study, 4H-SiC(0001) MOS capacitors and MOSFETs were fabricated with N 2 or NO annealing combined with H 2 etching prior to SiO 2 deposition. It was …
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ABSTRACT. Due to the wide bandgap and other key materials properties of 4H-SiC, SiC MOSFETs offer performance advantages over competing Si-based power devices. For …
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Enhancement-mode 4H-SiC MOSFETs utilising an aluminium oxide (Al2O3) dielectric without the requirement for an underlying silicon oxide (SiO2) layer have been shown to have a field effect mobility of 150 cm2V−1s−1 and a subthreshold swing of 160 mV/dec. The fabricated devices utilised a forming gas (3% H2 in N2) anneal immediately …
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2.1. Crystal and band structures. SiC is a IV–IV compound semiconductor, where only a rigid stoichiometry (Si:C=1:1) is allowed. The large SiC bond energy (about 4.6 eV) gives this material a wide bandgap, high critical electric field strength, and high phonon energies [1], [2], [3].Compared with other wide bandgap semiconductors such as III …
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A split-gate SiC trench MOSFET with a P-poly/SiC hetero-junction diode has been proposed for optimized reverse recovery characteristics and low switching loss [17]. Furthermore, SiC MOSFET with integrated n-/n-type poly-Si/SiC heterojunction freewheeling diode has been proposed, offering a lower V f, but at the cost of BV [18]. In this paper, a ...
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In this study, we investigated a 4H-SiC deep source trench metal-oxide semiconductor field-effect transistor (DST-MOSFET) using technology computer-aided …
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Force Microscopy (AFM). The alignment process of each step in the fabrication of 4H-SiC MOSFET was performed using Karl Suss MJB-3 mask aligner with a maximum resolution of 1 um. Figure1shows the summarized process used in the fabrication of 4H-SiC MOSFET and an image of the final 4H-SiC MOSFET taken under an optical …
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The 4H-SiC power MOSFET is an excellent candidate for power applications. Major technical difficultie s in the development of 4H-SiC power MOSFET have been low MOS channel mobility and gate oxide reliability. In this dissertation, a novel 4H-SiC power MOSFET structure has been presented with the aim of solving these problems.
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4H-SiC Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) with embedded Schottky barrier diodes are widely known to improve switching energy loss by reducing reverse recovery characteristics. However, it weakens the static characteristics such as specific on-resistance and breakdown voltage. To solve this problem, in this …
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Abstract. The performance and reliability of the state-of-the-art power 4H-SiC metal–oxide–semiconductor field-effect transistors (MOSFETs) are affected by electrically active defects at and ...
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Silicon carbide (SiC) is a wide bandgap semiconductor that has great potential in power device applications. 1 In addition to the superior physical properties of SiC, such as a very high breakdown field and good thermal conductivity over conventional Si, silicon dioxide (SiO 2) as a gate insulator in metal-oxide-semiconductor field-effect …
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In this paper, we compare a new 1.2 kV rated 4H-SiC split-gate (SG) MOSFET with the conventional planar-gate (PG) MOSFETs. Both structures were fabricated with the same design rules and process platform. Therefore, the structures have similar electrical parameters, such as ON-state drain-source resistance (RON), breakdown voltage (BV), …
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In the range of the channel doping concentrations in MESFETs, the electron mobility in 4H–SiC is higher than in 3C–SiC and 6H–SiC (see Fig. 1 ), providing for 4H–SiC MESFETs better microwave properties. Fig. 5 presents a MESFET structure on a conducting 4H–SiC substrate, which can operate up to 16 GHz, and have a power …
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SiC surface, (2) SiO 2 formation without SiC oxidation, and (3) high-temperature N 2 annealing. 34,35) However, it has not been demonstrated whether these processes are effective for improvement of the channel mobilities of SiC MOSFETs. In this study, 4H-SiC(0001) MOS capacitors and MOSFETs were fabricated with N 2 or NO …
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3 Fig. 2. Comparison of (a) the firs and (b) third quadrant behaviors of the fabricated JBSFET and MOSFET. The JBSFET was annealed at 900°C for 2 minutes while the MOSFET was annealed at 950°C for 2 minutes.
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band gap silicon carbide (SiC) semiconductors has begun to improve the performance and reduce the loss. Thanks to the excellent physical properties of SiC, SiC ... et al.: High Performance 4H-SiC MOSFETs with Optimum Design of Active Cell and Re-oxidation Process, PCIM Europe, 879–884 (2018) (2) Y. Fukui., et al.: Effects of Grounding Bottom ...
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4H-SiC homoepitaxial wafers were grown on 6-in. 4° off-axis Si-face 4H-SiC substrates through the CVD method. 12 Commercial-production-grade 6-in. 4H-SiC substrates were used. The structure of the epitaxial wafer is shown in Fig. 1.Silane (SiH 4), trichlorosilane (TCS), ethylene (C 2 H 4), and propane (C 3 H 8) are usually used as …
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the V-groove SiC MOSFET with the p-type buried struc-ture and inspect the utility in power electronic converter use. 2. Structure and Fabrication of MOS Devices Figure 1 shows the schematic cross-sectional view of the 4H-SiC trench MOSFET with p+ buried region below the trench bottom. The SiC epitaxial layer was grown on 4˚off-axis n-type 4H ...
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The structure of the 4H-SiC MOSFET is shown in figure 1. When compared to a silicon MOSFET, the 4H-SiC MOSFET structure is especially helpful for device scaling. In this structure a 4H-SiC epilayer is grown on a silicon substrate. The epilayer is doped with the boron concentration of 1×10 17 cm −3 .
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In this paper, a 4H-SiC trench gate MOSFET, featuring a super junction layer located on the drain-region side, is presented to enhance the breakdown voltage and the figures of merit (FOM). The proposed structure is investigated and compared with the conventional structure with a 2D numerical simulator—ATLAS. The investigation results …
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The proposed device exhibits a 48% reduction in on-resistance, with a higher threshold voltage than the conventional SiC planar MOSFET. A 4H-SiC Planar MOSFET with a blocking voltage of 2.3 kV was proposed . The device has an acceptable gate oxide electric field, with a gate oxide thickness of 27 nm.
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200C rated SiC MOSFET Fig. 2 SiC devices development milestones [6]. observed in the SiC MOSFET. Although its "normally on" characteristic makes it less attractive in some applications, a JFET with a cascode structure could eliminate this issue. The commercial SiC MOSFET was first released in 2011 by Cree. For the SiC MOSFET, the 1.2 kV ...
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1. Introduction. Silicon carbide (4H-SiC) is one of the primary wide-band-gap semiconductors for high power and harsh environment applications because of its physical properties, such as a high critical electric field and high thermal conductivity [].Discrete 4H-SiC diodes and metal–oxide–semiconductor field effect transistors …
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A 1.2 kV trench gate SiC MOSFET with a low switching loss was developed by Fiji Electric . The proposed device exhibits a 48% reduction in on-resistance, with a higher threshold voltage than the conventional SiC planar MOSFET. A 4H-SiC Planar MOSFET with a blocking voltage of 2.3 kV was proposed 2 . The fabricated device …
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Based on volume experience and compatibility know-how, Infineon introduces the revolutionary CoolSiC™ MOSFET technology which enables radically new product designs. In comparison to traditional Silicon-based switches like IGBTs and MOSFETs, the Silicon Carbide (SiC) Power MOSFET offers a series of advantages. CoolSiC™ MOSFET …
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SiC exists in a variety of polymorphic crystalline structures called polytypes e.g., 3C-SiC, 6H-SiC, 4H-SiC. Presently 4H-SiC is generally preferred in practical power device manufacturing. Single-crystal 4H-SiC wafers of 3 inches to 6 inches in diameter are commercially available. Properties Si 4H-SiC GaAs GaN
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Kyuhyun Cha and Kwangsoo Kim† Department of Electronic Engineering, Sogang University, Seoul 04107, Korea Abstract: In this paper, a 4H-SiC DMOSFET with a …
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