- +8618437960706
- دوشنبه تا شنبه: 10:00 - 16:00 / یکشنبه تعطیل است
Wolfspeed is the worldwide leader of Silicon Carbide MOSFETs, Schottky Diodes, and Power Modules. Our Reference Designs, Evaluation Kits, and Gate Driver Boards help you learn best practices and provide a starting …
به خواندن ادامه دهید
Wolfspeed is a trusted global leader of Silicon Carbide and GaN solutions for both high power and RF applications. We're growing to expand production to increase output, maximize efficiency, and reduce system …
به خواندن ادامه دهید
efficiency SiC offers, the reliability is a key selling point as well. After more than 13 years in the market, the failure-in-time (FIT) rate of SiC diodes is better than Si, and is less than one fail per billion hours of operation for Cree. SiC MOSFETs For SiC, 1200 V and higher MOSFETs have been fully released in the marketplace
به خواندن ادامه دهید
Cree C2M1000170D SiC MOSFET outperforms all of them. The Cree device is more robust and has better overall current-carrying capability. The lower output capacitance is linked to smaller die size of the SiC material, and is responsible for the reduced switching losses. The higher gate drive voltage is compatible with existing silicon drive ...
به خواندن ادامه دهید
SiC is very difficult to master and Cree has a ~30 year head start. The company was founded on SiC. The key is if they can spin off Wolfspeed or sell offf the LED part of the business. A business ...
به خواندن ادامه دهید
Durham, N.C. and Geneva, Aug. 17, 2021 — Cree, Inc. (Nasdaq: CREE), the global leader in silicon carbide technology through its Wolfspeed® business, and STMicroelectronics (NYSE: STM), a global semiconductor leader serving customers across the spectrum of electronics applications, announced today the expansion of an existing …
به خواندن ادامه دهید
Cree's Silicon Carbide power MOSFET delivers 1200V blocking voltage with lowest switching losses in its class. In a move that heralds a performance revolution in energy-efficient power electronics, Cree, Inc. (Nasdaq: CREE), a market leader in silicon carbide (SiC) power devices, has introduced the industry's first fully qualified …
به خواندن ادامه دهید
1 C3M0025065D Rev 1 12-2020 C3M0025065D Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features • 3rd Generation SiC MOSFET technology • High blocking voltage with low on-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen …
به خواندن ادامه دهید
2 © 2020 Cree, Inc. All rights reserved. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc. What is Silicon Carbide?
به خواندن ادامه دهید
What Can Be Done With Cree SiC Technology. Cree SiC based 3-ph, PV String Inverter comparison. Full Power MPPT Voltage Range 480 –850 VDC 450 –800 VDC Operating Voltage Range 200 –850 VDC 400 –950 VDC No. Indep MPPT Input 1 2 Nominal output power 50 kW 50 kW CEC Efficiency 97.5% 97.8%
به خواندن ادامه دهید
The silicon carbide (SiC) industry is in the midst of a major expansion campaign, but suppliers are struggling to meet potential demand for SiC power devices and wafers in the market.. In just one example of the expansion efforts, Cree plans to invest up to $1 billion to increase its SiC fab and wafer capacities. As part of the plan, Cree is …
به خواندن ادامه دهید
DURHAM, N.C. September 16, 2021 --Cree, Inc. (Nasdaq: CREE), the global leader in Silicon Carbide technology through its Wolfspeed business, today announced that it will transfer the listing of its common stock to the New York Stock Exchange ("NYSE") from The Nasdaq Global Select Market. Cree expects to commence …
به خواندن ادامه دهید
The family of modules provides an excellent solution for fast design implementation, scalability, long-term design support, and lower assembly overhead. Wolfspeed's Silicon Carbide (SiC) power module platform maximizes the benefits of SiC, while keeping the module and system design robust, simple, & cost effective.
به خواندن ادامه دهید
CREE Research 4600 Silicon Drive Durham, NC 27703 Abstract- A compact circuit simulator model is used to describe the performance of a 2 kV, 5 A 4-H silicon carbide (SIC) power DiMOSFET and to perform a detailed comparison with the performance of a widely used 400 V, 5 A silicon (Si) power MOSFET. The model's channel current expressions …
به خواندن ادامه دهید
With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway.
به خواندن ادامه دهید
DURHAM, N.C. – Cree, Inc. (Nasdaq: CREE) and ON Semiconductor Corporation (NASDAQ: ON) announced the execution of a multi-year agreement where …
به خواندن ادامه دهید
Capacity Expansion. We have opened the world's largest Silicon Carbide fabrication facility in Marcy, New York. This brand new, state-of-the-art power wafer fab will be automotive-qualified and 200mm-capable.
به خواندن ادامه دهید
News: Suppliers 18 August 2021. Cree | Wolfspeed and ST expand 150mm SiC wafer supply agreement to over $800m. Cree Inc of Durham, NC, USA, which provides silicon carbide technology through its Wolfspeed business, and STMicroelectronics of Geneva, Switzerland have expanded their existing multi-year, long-term silicon carbide wafer …
به خواندن ادامه دهید
Compared to silicon, Wolfspeed's new 650V silicon carbide MOSFETs deliver 75 percent lower switching losses and a 50 percent decrease in conduction losses which …
به خواندن ادامه دهید
Cree, Inc. has announced the sale of its LED products business unit, Cree LED, to Smart Global Holdings, a group of specialty memory, compute, and storage solution manufacturers, for up to $300 million.Marked as a key milestone in Cree's transformation to become a global pure-play semiconductor company and powerhouse for silicon carbide …
به خواندن ادامه دهید
A CREE COMPANY Medium Voltage SiC R&D update Jeffrey B. Casady, Ty McNutt, Dave Girder & John Palmour [email protected] or 919.308.2280 (US) April 2016. NEXT GENERATION SiC MOSFETS – OVER 5 YEARS IN THE MARKET 2 P-Well N+ N+ Source SourceContact Metal Degenerately doped Poly Si Gate Inter-metal Dielectric …
به خواندن ادامه دهید
Silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) have many advantages compared to silicon (Si) MOSFETs: low drain-source resistance, high thermal conductivity, low leakage current, and high switching frequency. As a result, Si MOSFETs are replaced with SiC MOSFETs in many industrial applications. …
به خواندن ادامه دهید
Since Infineon has already converted all its SiC manufacturing lines to the most advanced 150 millimeter SiC wafers, the agreement with Cree covers only this wafer diameter. "We have known …
به خواندن ادامه دهید
Cree SiC MOSFET Infineon Si IGBT im Eon 2.47 8.78 Eoff 1.28 8.78 Erec 0.53 5.93 Figure 7. Eon Comparison of both Si IGB MOSFET under different tempera f at 100A with on, Eoff, and BT and SiC arameters, the and Figure.9 IGBT loss is perature and for the SiC ch with the ven lower for the negative ET threshold ºC for both it shows SiC IGBT. ry
به خواندن ادامه دهید
6H-SiC single crystal successfully grown, and the first SiC company was established (Cree) The first commercial SiC wafer released (25mm) The first SiC SBD developed (NCSU) …
به خواندن ادامه دهید
Cree, which earlier sold its LED business, is now betting on SiC power semiconductor solutions after adopting the new name of Wolfspeed, priorly a division in the company. "That's who we are," says …
به خواندن ادامه دهید
Wolfspeed was founded as Cree Research in 1987, a pioneer in SiC applications. The company introduced the first SiC-based blue LED in 1989, a critical enabler for LED-based lighting.
به خواندن ادامه دهید
Offering n-type conductive SiC products and a variety of SiC epitaxy options, Wolfspeed delivers the quality and quantity necessary to support the rapidly expanding demand for high-efficiency, SiC power semiconductors. When you partner with Wolfspeed, you get …
به خواندن ادامه دهید
Cree offers SiC and III-nitride epitaxy on n-, p-type and high-purity semi-insulating (HPSI) substrates. The firm sees applications for SiC/SiC epiwafers as being optoelectronics, power factor correction (PFC), solar inverters, and industrial motor drives. III-nitride epitaxy on SiC is seen as being more suited to high-power RF,
به خواندن ادامه دهید
DURHAM, N.C. Oct. 4, 2021 – Following a massive four-year transformation, involving the divestiture of two-thirds of the business and a repositioning of the company's overall core strategy, today marks the creation of Wolfspeed, Inc. (NYSE: WOLF), the global leader in Silicon Carbide technology and production.The company, formerly known as …
به خواندن ادامه دهید
77.5 nC per leg. 440 W. TO-247-3. Industrial. Yes. C4D40120H. Offering the industry's broadest portfolio of Silicon Carbide (SiC) Schottky Diodes. Pairing our SiC Schottky Diodes with SiC MOSFETs creates a powerful combination of higher efficiency and reduced component pricing.
به خواندن ادامه دهید
The first power SiC MOSFET developed (Cree) SiC Schottky diodes were first reported in China 1987 1991 n In 1987, 6H-SiC single crystal was successfully grown, and SiC materials entered the world of power semiconductors n In 2001, Infineon/Cree released its first commercial SiC SBD product, and SiC devices entered the commercial stage 2001 …
به خواندن ادامه دهید