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Geneva, Switzerland, July 27, 2021 – STMicroelectronics (NYSE: STM), a global semiconductor leader serving customers across the spectrum of electronics …
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Power MOSFET Applications. The ST Power MOSFET portfolio offers a broad range of breakdown voltages from -100 to 1700 V, combining state-of-the-art packaging with low gate charge and low on-resistance. Our process technology ensures high-efficiency solutions through enhanced power handling with MDmesh high-voltage power MOSFETs and …
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STMicroelectronics N.V.'s Annual Report over 2022 consists of a message from the President and Chief Executive Officer on the financial year 2022 (chapter 1), the management report (chapter 2 through chapter 5), the dividend policy (chapter 6), the financial information (chapter 7 through chapter 9) and important dates (chapter 10).
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Create more efficient and compact systems than ever with STPOWER SiC MOSFETs. Bring the advantages of innovative wide bandgap materials (WBG) to your next design thanks …
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STMicroelectronics Silicon Carbide Power MOSFETs bring the advanced efficiency and reliability of wide bandgap materials to a broader range of energy-conscious applications. Skip to Main Content (800) 346-6873 ... ST SiC MOSFETs allow the design of more efficient and compact systems. ST's 1200V SiC MOSFETs exhibit an outstanding …
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The main features of our SiC MOSFETs include: Automotive-grade (AG) qualified devices. Very high temperature handling capability (max. T J = 200 °C) Very high switching frequency operation and very low switching losses. Low on-state resistance. Gate drive compatible with existing ICs. Very fast and robust intrinsic body diode.
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News: Microelectronics 17 April 2023. Multi-year deal signed for ST to supply silicon carbide devices to ZF. STMicroelectronics of Geneva, Switzerland has signed a multi-year contract to supply a volume of double-digit millions of silicon carbide devices that will be integrated into the new modular inverter architecture of Germany-based ZF …
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For further information, please contact: Michael Markowitz. Director Technical Media Relations. Tel: +1 781 591 0354. Email: [email protected]. 1 MOSFET (metal-oxide-semiconductor field ...
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Under this research collaboration, A*STAR's IME and STMicroelectronics aim to develop and optimize SiC integrated devices and package modules to offer significantly better performance in next ...
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They are suitable for a range of power ratings and voltages up to 1,200 V. STMicroelectronics claims that the SiC-MOSFET-based power modules are robust and built with sintering technology. The new ...
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October 05, 2022 02:00 ET | Source: STMicroelectronics N.V. Follow. STMicroelectronics to build integrated Silicon Carbide substrate manufacturing facility in Italy. First-of-a-kind SiC epitaxial ...
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STMicroelectronics（STマイクロエレクトロニクス）は、SiCウエハーをイタリアにすると2022105（）にした。によれば、150mmのSiCエピタキシャルウエハーをるのになるという。
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The advantages of SiC power devices. Power devices based on silicon carbide offer various key benefits over conventional silicon devices. Their higher voltage and higher frequency …
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STMicroelectronics of Geneva, Switzerland is introducing its third generation of STPOWER silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors …
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Geneva, Switzerland, December 9, 2021 - STMicroelectronics (NYSE: STM), a global semiconductor leader serving customers across the spectrum of electronics …
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STMicroelectronics is in the top five of companies supplying silicon power semiconductors. Silicon carbide revenues are less than 10% of the revenues of silicon power semiconductors. The...
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Unnerved by a pre-pandemic electronics materials shortage, STMicroelectronics took the decision to start bringing its supply chain for silicon carbide …
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STMicroelectronics Reports Q4 and FY 2020 Financial Results. Q4 net revenues $3.24 billion; gross margin 38.8%; operating margin 20.3%; net income $582 million. FY net revenues $10.22 billion ...
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ST has announced that it has begun manufacturing 200mm Silicon-Carbide (SiC) wafers at its Norrköping, Sweden facility. Manufacturers have long employed 200mm and larger wafers in the production of CMOS chips, but ST is reportedly the first to extend the technology to silicon carbide fabrication. They won't be the last, because transitioning ...
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The JV will make SiC devices exclusively for STMicroelectronics, using ST proprietary SiC manufacturing process technology, and serve as a dedicated foundry to ST to support the demand of its ...
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SiC is now the material of choice for EVs, and market research firm Yole Group predicts that the EV/hybrid-vehicle market will represent more than 70% of the SiC market, equating to $4.7 billion, in 2027. The sustained demand for SiC wafers is such that IDMs like ST, Infineon and onsemi are adjusting their strategies to meet the …
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STMicroelectronics boosts EV performance and driving range with new silicon-carbide power modules Hyundai Motor Company has chosen ST's highly efficient ACEPACK DRIVE power modules for multiple ...
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Our technologies enable smarter mobility, more efficient power and energy management, and the wide-scale deployment of the Internet of Things and 5G technology. Further information can be found at ...
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STMicroelectronics' microcontroller STM32H5 Discovery kit accelerates building secure, smart, connected devices. Visit the Newsroom. ST is a global high-tech company creating semiconductor technologies for a smarter, greener, and more sustainable future.
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Automotive. To serve our broad global customer base ST supports a wide range of automotive applications with products and solutions that are making driving safer, greener and more connected. Our wide range of single- and multi-core automotive MCUs includes the 8-bit STM8A series and the 32-bit SPC5 family built on Power Architecture® technology.
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Moreover, for the GEN3 (SCT130N120G3) SiC MOSFETs (STMicroelectronics) we further investigated the impact on the device lifetime of the neutron exposure by per-forming High Temperature Reverse Bias (HTRB) and High Temperature Gate Bias (HTGB) reliability tests. The investigated samples of GEN3 SiC …
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July 27, 2021 - STMicroelectronics, a global semiconductor leader serving customers across the spectrum of electronics applications, today announced it has manufactured the first 200mm (8-inch) Silicon-Carbide (SiC) bulk wafers for prototyping next-generation power devices from its facility in Norrköping, Sweden. The transition to 200mm SiC ...
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• Agreement to qualify Soitec technology for future 200mm SiC substrate production ... About STMicroelectronics. At ST, we are 48,000 creators and makers of semiconductor technologies mastering the semiconductor supply chain with state-of-the-art manufacturing facilities. An integrated device manufacturer, we work with more than …
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Marco Cassis is STMicroelectronics' President, Analog, MEMS and Sensors Group and has held this position since January 1st, 2022. He also heads the corporate functions of Strategy Development, System Research and Applications, and Innovation Office, and is a member of ST's Executive Committee.
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STMicroelectronics is planning integrated silicon carbide substrate manufacturing facility on the Italian island of Sicily to support demand for SiC ICs from automotive and industrial customers. "Production is expected to start in 2023, enabling a balanced supply of SiC substrate between internal and merchant supply," said the …
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Largely thanks to Tesla, STMicroelectronics has a firm foothold in the burgeoning e-mobility market segment and is today's power SiC device market leader. Its partnership with the Renault-Nissan-Mitsubishi Alliance for on-board chargers has helped to bolster its position while more recent deal with Chinese BYD has also fuelled Q4 figures.
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News: Microelectronics 5 October 2022. ST to build €730m silicon carbide wafer factory in Catania, Italy. STMicroelectronics of Geneva, Switzerland is to build an integrated silicon carbide (SiC) substrate manufacturing facility in Italy to support the increasing demand from customers for SiC devices across automotive and industrial …
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STのSiC（シリコン･カーバイド）MOSFETは、650V～2200Vのいにてされます。. のテクノロジー･プラットフォームの1つで、れたスイッチングおよびきわめていたりのオンをとします。. SiCパワーMOSFETの. …
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